Aluminum nitride (AlN) thin films were deposited on Z-cut LiNbO3 substrates using the reactive RF magnetron sputtering in this thesis. By means of the analyses of XRD, SEM and AFM, the optimal deposition conditions of highly C-axis oriented AlN films were sputtering pressure of 3.5 mTorr, nitrogen concentration (N2/N2+Ar) of 60%, RF power of 165W and substrate temperature of 400¢J. The piezoelectric bi-layers structure of SAW devices was then fabricated.
The interdigital transducers (IDTs) were fabricated on bi-layers structure. The AlN thin film thickness of piezoelectric bi-layers structure was varied in order to discuss its effects on SAW devices. From the experimental results, it reveals that the center frequency of SAW filters increases with the increased AlN thin films thickness. It means that the SAW velocity increases as the AlN thin films thickness increases. The effects of bi-layers structure on SAW devices can be discussed in detail by measuring the parameters of SAW devices like insertion loss (IL), electromechanical coupling coefficient (K2) and the temperature coefficient of delay (TCD).
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0704101-233235 |
| Date | 04 July 2001 |
| Creators | Chen, Chien-Hsing |
| Contributors | Jung-Chuan Chou, Man-Phon Houng, Houng-Mo Duh, Nan-Chung Wu, Ying-Chung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-233235 |
| Rights | unrestricted, Copyright information available at source archive |
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