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Studies of localized electrical properties of ZnO:Al by scanning probe microscope (SPM). / 基於掃描探針顯微鏡 SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / Studies of localized electrical properties of ZnO:Al by scanning probe microscope (SPM). / Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu

Fang, Qianying = 基於掃描探針顯微鏡(SPM)的關於鋁摻雜氧化鋅(ZnO:Al)局域電學性質之研究 / 方倩莹. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references (leaves 97-100). / Text in English; abstracts in English and Chinese. / Fang, Qianying = Ji yu sao miao tan zhen xian wei jing (SPM) de guan yu lü shan za yang hua xin (ZnO:Al) ju yu dian xue xing zhi zhi yan jiu / Fang Qianying. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- Substrates / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Microscopic electrical measurement / Chapter 2.2.1 --- Conductive atomic force microscope (c-AFM) / Chapter 2.2.2 --- Scanning capacitance microscope (SCM) / Chapter 2.2.3 --- Surface Potential (SP) / Chapter 2.3 --- SEM and cathodoluminescence spectroscopy / Chapter 3 --- Calibrations / Chapter 3.1 --- Calibrations of c-AFM measurements / Chapter 3.1.1 --- Reproducible images / Chapter 3.1.2 --- Further statistical analysis / Chapter 3.1.3 --- Sample thickness effect / Chapter 3.1.4 --- Conclusions / Chapter 3.2 --- Calibrations of cathodeluminescence (CL) measurements / Chapter 3.2.1 --- Effect of removing residual magnetic field / Chapter 3.2.2 --- Effect of Faraday cup moving / Chapter 3.2.3 --- Time effect / Chapter 3.2.4 --- Effect of mirror shift / Chapter 3.2.5 --- Effect of electron beam shift / Chapter 3.2.6 --- Conclusions / Chapter 3.3 --- Calibrations of scanning capacitance microscope (SCM) measurements / Chapter 3.3.1 --- SCM images and morphological dependence of as-deposited AlOx/ZnO thin film / Chapter 3.3.2 --- Comparison between as-deposited and e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.3 --- SCM images and morphological dependence of e-beam irradiated AlOx/ZnO thin film / Chapter 3.3.4 --- Conclusions / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Conductive Atomic Force Microscope (c-AFM) / Chapter 4.1.1 --- Effect of scan rate / Chapter 4.1.2 --- Dual images and morphological dependence / Chapter 4.1.3 --- Statistic microscopic current-voltage (I-V) / Chapter 4.1.4 --- Schottky barrier at Pt-ZnO contact / Chapter 4.1.5 --- C-AFM artifact / Chapter 4.2 --- Scanning Capacitance Microscope (SCM) / Chapter 4.2.1 --- Dual images and morphological dependence / Chapter 4.2.2 --- Statistic microscopic SCM data-voltage (dC/dV-V) / Chapter 4.3 --- Surface Potential (SP) / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_326265
Date January 2008
ContributorsFang, Qianying., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, x, 100 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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