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The luminescence properties of the wide bandgap nitrides doped with rare earth ions and gallium nitride doped with conventional isoelectronic impurities

Thesis (Ph. D.)--Ohio University, 2001. / Title from PDF t.p.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/225903884
Date January 2001
CreatorsJadwisieńczak, Wojciech M.
PublisherOhio : Ohio University,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceConnect to resource online

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