A flash evaporation system is constructed in order to deposit thin films of Gallium Antimonide. The system includes a substrate heater-holder, a film thickness monitoring device and a powdered evaporant feeder.
Thin films of GaSb, 2 to 4 microns thick are deposited on glass, sapphire and silicon substrates maintained at temperatures up to 365°C. The deposited films are observed to have many structural defects. The films exhibit semiconductor-like properties.
Optical studies of the fundamental absorption edge at liquid-nitrogen temperature show that the films deposited on heated sapphire substrates have a polycrystalline structure and a band gap of 0.78 eV. The nature of the films is dependent on the type and temperature of the substrate. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/35998 |
| Date | January 1968 |
| Creators | Ryall, Patrick Randall |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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