This research is related to the molecular beam epitaxy (MBE ) to grow GaSb . The fabrication of GaSb/InGaSb strained quantum well and superlattice structures are used for photodetection .
They are carefully investigated to obtain high quality of GaSb films. The growth mechanisms related to the major factors of (1) Subtrate temperature (2) Beam flux ratio(V/III). The properties of GaSb epilayers are characterized by different methods such as the X-ray diffraction , I-V curve and Raman spectra .
The optimum growth conditions 500¢J of substrate temperature and the V/III flux ratio about 2~3 have been obtained. On the basis of structure, the best growth conditions is identified by the peak intensity and FWHM related to the quality of the GaSb films by the X-ray diffraction. On the basis of electrical property, the best growth conditions is identified by the lowest leakage current for the p-n junction related to the quality of the GaSb films by the I-V curve. On the basis of optical property, the best growth conditions is identified by the LO mode phonon intensity related to the quality of the GaSb films by the Raman spectra.
Based on the GaSb growth studied here, the study will be focused in the quantum well and quantum dot laser devices furtherly by us.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0628100-010508 |
| Date | 28 June 2000 |
| Creators | Kuo, Chia-Cheng |
| Contributors | Wei-Chou Hsu, Mau-Phon Houng, Aina Hung, Yeong-Her Wang, Herng-Yih Ueng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628100-010508 |
| Rights | restricted, Copyright information available at source archive |
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