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Cluster tool for in situ processing and comprehensive characterization of thin films at high temperatures

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/ amorphous Si (~60 nm)/ Ag (~30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650°C. Its initial and final composition, stacking order and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:33926
Date07 May 2019
CreatorsWenisch, R., Lungwitz, F., Hanf, D., Heller, R., Zscharschuch, J., Hübner, R., von Borany, J., Abrasonis, G., Gemming, S., Escobar-Galindo, R., Krause, M.
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation10.1021/acs.analchem.8b00923

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