Return to search

Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells

Thesis--University of Florida. / Description based on print version record. Typescript. Vita. Includes bibliographical references (leaves 185-192).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/650558511
Date January 1979
CreatorsShibib, Muhammed Ayman,
PublisherGainesville, FL,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

Page generated in 0.0023 seconds