Return to search

A Study on the properties of amorphous boron and borne-silicon alloy films prepared by low pressure chemical vapour deposition.

by Ong Chung Wo. / Title also in Chinese. / Thesis (Ph.D.)--Chinese University of Hong Kong. / Bibliography: leaves 258-263. / Acknowledgements / Abstract / Table of Contents / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Sample Preparation --- p.6 / Chapter A. --- General Review of Chemical Vapour Deposition Technique --- p.6 / Chapter B. --- Our Deposition System --- p.9 / Chapter B.1 --- General Description --- p.9 / Chapter B.2 --- Induction Heater --- p.10 / Chapter B.3 --- Graphite Susceptor --- p.12 / Chapter B.4 --- Safety --- p.13 / Chapter C. --- Sample Description --- p.16 / Chapter Chapter 3 --- Thickness Measurement --- p.26 / Chapter Chapter 4 --- Composition Analysis --- p.29 / Chapter A. --- Introduction --- p.29 / Chapter B. --- Composition Analysis of Boron-Silicon Films Using EDX --- p.32 / Chapter B.1 --- Experimental Method --- p.32 / Chapter B.2 --- Requirement on Film Thickness and Preparation of Unsupported Films --- p.33 / Chapter B.3 --- Possible Applications and Limitations of Our Method --- p.35 / Chapter B.4 --- Results --- p.35 / Chapter Chapter 5 --- X-ray Diffraction Experiment --- p.42 / Chapter A. --- Introduction --- p.42 / Chapter B. --- Structures of Boron and Silicon-Boron Compounds --- p.43 / Chapter B.1 --- B12 Icosahedron and Three-Center Two-Electron Bond --- p.43 / Chapter B.2 --- Polymorphism of Crystalline Boron --- p.44 / Chapter B.2.1 --- α-Rhombohedral Boron --- p.44 / Chapter B.2.2 --- β-Rhombohedral Boron --- p.45 / Chapter B.2.3 --- Amorphous Boron --- p.47 / Chapter B.3 --- Structures of Crystalline Boron-Silicon Compounds --- p.48 / Chapter C. --- X-ray Diffraction Experiment --- p.50 / Chapter C.1 --- Experimental Technique --- p.50 / Chapter C.2 --- Analysis of X-Ray Diffraction Pattern --- p.50 / Chapter D. --- Results and Discussion --- p.51 / Chapter D.1 --- Boron Films --- p.51 / Chapter D.2 --- Boron-Silicon Films --- p.57 / Chapter Chapter 6 --- Infrared Absorption Experiment --- p.84 / Chapter A. --- Experimental Method --- p.84 / Chapter B. --- Results --- p.87 / Chapter C. --- Discussion --- p.88 / Chapter C.1 --- Analysis of Boron Films --- p.88 / Chapter C.1.1 --- Indentification of Three Absorption Bands --- p.88 / Chapter C.1.2 --- Effect of Substrate Temperature --- p.91 / Chapter C.2 --- Analysis of Boron-Silicon Films --- p.92 / Chapter C.2.1 --- Effect of Substrate Temperature --- p.92 / Chapter C.2.2 --- Effect of Silicon Incorporation --- p.93 / Chapter C.2.3 --- Existence of Icosahedral Clusters --- p.94 / Chapter C.3 --- Comparative Study of Deposition Mechanism Between Thermal CVD Method and Glow Discharge Method --- p.94 / Chapter Chapter 7 --- Microhardness and Surface Morphology --- p.111 / Chapter A. --- Measuring Techniques --- p.111 / Chapter B. --- Microhardness Measurement --- p.113 / Chapter B.1 --- Boron Films --- p.113 / Chapter B.2 --- Boron-Silicon Films --- p.114 / Chapter C. --- Surface Morphology --- p.114 / Chapter C.1 --- Boron Films --- p.114 / Chapter C.2 --- Boron-Silicon Films --- p.115 / Chapter Chapter 8 --- Optical Absorption Experiment --- p.127 / Chapter A. --- Introduction --- p.127 / Chapter B. --- Theory of Optical Absorption --- p.128 / Chapter B.1 --- Absorption of Crystalline Materials --- p.129 / Chapter B.2 --- Optical Absorption of Amorphous Materials --- p.132 / Chapter C. --- Results --- p.135 / Chapter C.1 --- Boron Films --- p.135 / Chapter C.2 --- Boron-Silicon Films --- p.136 / Chapter D. --- Analysis --- p.138 / Chapter D.1 --- Band Models --- p.138 / Chapter D.2 --- Deconvolution of Absorption Spectra --- p.140 / Chapter D.2.1 --- Deconvolution of Absorption Spectra of Boron Films --- p.141 / Chapter D.2.2 --- Deconvolution of Absorption Spectra of Boron-Silicon Films --- p.144 / Chapter D.2.3 --- Results --- p.146 / Chapter E. --- Discussion --- p.149 / Chapter Chapter 9 --- Conductivity and Thermoelectric Power Measurements --- p.203 / Chapter A. --- Transport Mechanism in Amorphous Semiconductors --- p.203 / Chapter A.1 --- Band Models of Amorphous Semiconductors --- p.203 / Chapter A.2 --- Electrical Conductivity and Thermoelectric Power --- p.205 / Chapter B. --- Experimental Methods --- p.208 / Chapter C. --- Results --- p.209 / Chapter C.1 --- Boron Films --- p.209 / Chapter C.2 --- Boron-Silicon Films --- p.210 / Chapter D. --- Discussion --- p.212 / Chapter D.1 --- Boron Films --- p.212 / Chapter D.2 --- Boron-Silicon Films --- p.213 / Chapter Chapter 10 --- Electron Spin Resonance --- p.230 / Chapter A. --- Introduction --- p.230 / Chapter B. --- Experimental Method --- p.231 / Chapter C. --- Results --- p.231 / Chapter C.1 --- Boron Films --- p.231 / Chapter C.2 --- Boron-Silicon Deposited at 300°C --- p.232 / Chapter C.3 --- Boron-Silicon Deposited at 460 and 620°C --- p.233 / Chapter D. --- Discussion --- p.235 / Chapter D.1 --- Boron Films --- p.235 / Chapter D.2 --- Boron-Silicon Films --- p.237 / Chapter Chapter 11 --- Conclusion --- p.254 / Chapter A. --- Structure --- p.254 / Chapter B. --- Mechanical Properties --- p.256 / Chapter C. --- Optical Absorption and Density of States --- p.256 / Chapter D. --- Electrical Properties --- p.257 / References --- p.258

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_318780
Date January 1991
ContributorsOng, Chung Wo., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, [6], 263 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Page generated in 0.0019 seconds