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Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:osu1149089614
Date08 August 2006
CreatorsPark, Kibog
PublisherThe Ohio State University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=osu1149089614
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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