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The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu

Abstract
The behaviors of the TaNx barrier layer that placed
between the Cu metal and GaAs have been studied
by using X-ray diffraction, X-ray photoelectron
spectroscopy and scanning electron microscopy.
The TaNx and Cu films were deposited on GaAs
sequentially with RF magnetron sputter.
With a 250 nm thick TaNx barrier layer, the Cu
metal can be impeded from reacting with GaAs
substrate at 575¢Jannealed for one hour.
Within an As or Ga overpressure environment condition,
the failure temperature still occurred below 600¢J.
The failure of TaNx diffusion barrier layer for
preventing the reaction of the Cu and GaAs was originated
for the dissociation of the GaAs itself at 580¢J.
The outgoing As atoms increased the deterioration speed
of the TaNx film and reduced its blocking ability.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0620100-141802
Date20 June 2000
CreatorsYueh, Zhi-Wei
ContributorsSheng-Lung Huang, Bae-Heng Tseng, Huang-Yeu Hsieh
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802
Rightsunrestricted, Copyright information available at source archive

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