In recent years, BiFeO3 (BFO) has attracted much attention due to that exhibits ferroelectric and antiferromagnetic properties at room temperature. It potentially develops the spintronics and multiple-state memories. BFO suffered from serious leakage, therefore the BFO discussed in this report has doped 10% Pb to reduce the leakage problem.
The thin films are synthesized by radio frequency (RF) sputtering technique. The conductive SrRuO3 (SRO) thin film is deposited on the SrTiO3 (STO) substrate as a buffer layer and bottom electrode for piezoelectric measurements and subsequently deposited the multiferroics- BFO thin film.
Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) are used to observe the morphologies and domain images in nanometer scale by different parameters and avoid the disturbance of leakage reasonably. The variations of piezoelectric properties through grain-grain boundary and domain-domain boundary are also studied in this report.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0331111-120511 |
| Date | 31 March 2011 |
| Creators | Tai, Yang-Han |
| Contributors | Yi-Chun Chen, Tai-Chun Han, Hsiung Chou, Ying-Chung Chen, Chin-Chung Yu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0331111-120511 |
| Rights | restricted, Copyright information available at source archive |
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