Today¡¦s electronic components draw high levels of power and run at high temperature, which can present overheating problems for engineers and designers. They must find ways to keep the equipment cool or watch them fail prematurely. The conventional thermoelectric devices are high power consµming and slow response. We need more integrated and high performance thermoelectric device. Because of the
limit of material characteristics, the figure of art rising with the quality of epitaxial layer. We gave a cheaper and easier fabrication to realized this demand.
We present a micro thermoelectric device fabricated by Bi2Te3 electrochemical process. By using rotary cathode electrode, the current density can be well-proportioned. The thermal conduction and resistivity can be optimizing by this design. Also using the MEMS technology with repeated exposure and development of multiple photoresist layers, several different metals (Au, Cr) and thermoelectric
materials (Bi2Te3, Sb2Te3) are fabricated.
The SiO2 of 0.5µm was grown. Then the 0.3£gm-thick Au on oxidized Si sputtered with a 1£gm thick layer of Cr. And the bottom electrode was patterned by lift-off. Thick positive photoresist with one set of holes developed. Bi2Te3 was deposited by electrochemical deposition. And the Sb2Te3 is growing with the same method. The upper electrode sputtered with thin Au film and pattern by lift-off.
Finally, Cr was etched to electrically isolate the bottom interconnects.
The area of Bi2Te3 is about 50x50£gm2. And it¡¦s high about 5£gm. The ZT value of Bi2Te3, which is measured and verified to be around 0.0088.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718105-084233 |
Date | 18 July 2005 |
Creators | Zeng, Guo-Yuan |
Contributors | Ruey-Shing Huang, I-YU Huang, Tsai Bill, Bau-Tong Dai |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718105-084233 |
Rights | campus_withheld, Copyright information available at source archive |
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