This thesis focus on the epitaxial growth and optical characterization of diluted InAs/InP(001) quantum dots for the realisation of new nanophotonic devices emitting at 1.55 [micro]m. The structural and optical properties of the quantum islands are correlated to different growth parameters of a solid source molecular beam epitaxy system. Our results highlight the influence of InAs surface reconstructions on the island shape. Dots rather than elongated dashes usually observed can be directly formed by adequate growth conditions. Dash to dot shape transition is also demonstrated by post-growth treatments. Low dot densities are obtained for small InAs deposited thickness. Their emission wavelength is easily tuned to 1.55 [micro]m using the"double cap" procedure for the growth of the InP capping layer. Optical properties of such single InAs/InP quantum dots are then evaluated. Micro-photoluminescence studies reveal sharp and well separated emission lines near 1.55 [micro]m from single dots confirming their atom-like properties. Last, we propose for the first time a high spatial resolution method to study the carrier transport in the vicinity of a single quantum dot using a low-voltage cathodoluminescence technique. A direct measurement of the carrier diffusion length before capture into one dot has been obtained. These results open the way to the integration of these single dots into optical micro-cavities for the realisation of quantum light sources at 1.55 [micro]m.
| Identifer | oai:union.ndltd.org:usherbrooke.ca/oai:savoirs.usherbrooke.ca:11143/5117 |
| Date | January 2010 |
| Creators | Dupuy, Emmanuel |
| Contributors | Morris, Denis, Drouin, Dominique, Gendry, Michel |
| Publisher | Université de Sherbrooke |
| Source Sets | Université de Sherbrooke |
| Language | French |
| Detected Language | English |
| Type | Thèse |
| Rights | © Emmanuel Dupuy |
Page generated in 0.0019 seconds