Return to search

Accuracy improvement in XPS by low energy argon ion.

Tam Yi Mei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.ii / 摘要 --- p.iii / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xii / Chapter Chapter 1 --- Background of study --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Theoretical background of XPS --- p.2 / Chapter 1.2.1 --- Principle of XPS --- p.2 / Chapter 1.2.2 --- Surface sensitivity --- p.6 / Chapter 1.2.3 --- Inelastic Mean Free Path (IMFP) --- p.6 / Chapter 1.3 --- XPS spectral features --- p.7 / Chapter 1.3.1 --- Chemical shift --- p.8 / Chapter 1.3.2 --- Spin orbital splitting (SOS) --- p.8 / Chapter 1.4 --- Quantitative analysis in XPS --- p.10 / Chapter 1.4.1 --- Atomic concentration --- p.10 / Chapter 1.4.2 --- Layer thickness determination --- p.11 / Chapter 1.5 --- The new XPS analysis technique in the present study --- p.14 / Chapter 1.5.1 --- Ion sputtering --- p.14 / Chapter 1.5.1.1 --- Sputtering-induced defects --- p.16 / Chapter 1.5.1.2 --- Effects of ion incident angle --- p.17 / Chapter 1.5.1.3 --- Depth resolution --- p.17 / Chapter 1.5.2 --- Perpendicular detection --- p.19 / Chapter 1.6 --- Objectives of present study --- p.23 / References for Chapter1 --- p.24 / Chapter Chapter 2 --- Instrumentation --- p.28 / Chapter 2.1 --- Introduction --- p.28 / Chapter 2.2 --- X-ray Photoelectron Spectroscopy --- p.28 / Chapter 2.2.1 --- XPS used in the present study --- p.28 / Chapter 2.2.2 --- Vacuum requirements --- p.29 / Chapter 2.2.3 --- X-ray source --- p.29 / Chapter 2.2.4 --- Charge Neutralizer --- p.33 / Chapter 2.2.5 --- Ion sputtering gun --- p.34 / Chapter 2.2.6 --- Electron energy analyzer --- p.36 / Chapter 2.2.6.1 --- Energy resolution --- p.38 / Chapter 2.2.6.2 --- Pass energy --- p.38 / Chapter 2.2.7 --- Electron detector / Multiplier --- p.39 / Chapter 2.3 --- Other analysis techniques for verification --- p.42 / Chapter 2.3.1 --- Energy Dispersive X-ray detector in Scanning Electron Microscope (SEM-EDX) --- p.42 / Chapter 2.3.2 --- X-ray Fluorescence Spectrometer (XRF) --- p.42 / Chapter 2.3.3 --- Rutherford Backscattering Spectrometer (RBS) --- p.43 / Chapter 2.3.4 --- Differential Scanning Calorimeter (DSC) --- p.44 / References for Chapter2 --- p.45 / Chapter Chapter 3 --- Determination of the thickness of the damaged layer --- p.46 / Chapter 3.1 --- Introduction --- p.46 / Chapter 3.2 --- Experimentation --- p.46 / Chapter 3.2.1 --- Instrumentation --- p.46 / Chapter 3.2.1.1 --- Work function calibration --- p.48 / Chapter 3.2.1.2 --- Sputtering ion beam calibration --- p.49 / Chapter 3.2.2 --- Sample preparation --- p.49 / Chapter 3.2.3 --- XPS measurements --- p.51 / Chapter 3.3 --- Results and discussion --- p.53 / Chapter 3.3.1 --- Spectral analysis and peak fitting --- p.53 / Chapter 3.3.2 --- Modeling and damaged layer thickness determination --- p.59 / Chapter 3.3.3 --- TRIM simulation --- p.62 / Chapter 3.4 --- Conclusion --- p.65 / References for Chapter3 --- p.68 / Chapter Chapter 4 --- Applications of the new XPS technique to different materials --- p.70 / Chapter 4.1 --- Introduction --- p.70 / Chapter 4.2 --- Analysis of ceramic --- p.70 / Chapter 4.2.1 --- Experimentation --- p.71 / Chapter 4.2.2 --- XPS results and comparison with other analysis techniques --- p.74 / Chapter 4.3 --- Analysis of metal alloys --- p.77 / Chapter 4.3.1 --- Experimentation for the tin-lead solder bump analysis --- p.78 / Chapter 4.3.2 --- Calibration of XPS sensitivity --- p.78 / Chapter 4.4 --- Development of XPS analysis method for the tin-silver solder bump measurement --- p.82 / Chapter 4.4.1 --- Experimentation --- p.83 / Chapter 4.4.2 --- XPS results --- p.83 / Chapter 4.5 --- Analysis of polymer (Polyacrylic acid) --- p.84 / Chapter 4.5.1 --- XPS results --- p.84 / Chapter 4.6 --- Analysis of Indium Phosphide --- p.90 / Chapter 4.6.1 --- XPS results --- p.92 / Chapter 4.7 --- Analysis of Gallium Arsenide --- p.96 / Chapter 4.8 --- Conclusion --- p.100 / References for Chapter4 --- p.101 / Chapter Chapter 5 --- Conclusions --- p.102

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324882
Date January 2004
ContributorsTam, Yi Mei., Chinese University of Hong Kong Graduate School. Division of Chemistry.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xiii, 103 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Page generated in 0.0032 seconds