This letter presents the design and characterization results of a multi-octave power amplifier fabricated in a 0.13μm SiGe-BiCMOS technology. The single stage power amplifier is implemented as the stack of a cascode amplifier combining broadband input matching network with resistive feedback, and a common-base amplifier with base capacitive feedback. Measurement results show that the design delivers a peak saturated output power level of 20.2 dBm, with output 1 dB compression at 19.4 dBm. The measured 3 dB power bandwidth is from 4 GHz to 32 GHz, covering three octaves. The corresponding power fractional bandwidth is 156 %. The measured peak power added efficiency is 20.6 %, and peak small signal gain is 18.6 dB. The fabricated integrated circuit occupies an area of 0.71mm2. To compare state-of-the-art multi-octave power amplifiers, the power amplifier figure of merit defined by the international technology roadmap for semiconductors is modified to include power fractional bandwidth and area. To the knowledge of the authors, the presented design achieves the highest figure of merit among multi-octave power amplifiers in a silicon based integrated circuit technology reported in literature.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76612 |
| Date | 11 November 2021 |
| Creators | Thayyil, Manu Viswambharan, Li, Songhui, Joram, Niko, Ellinger, Frank |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 1531-1309, 1558-1764, https://doi.org/10.1109/LMWC.2019.2942189, info:eu-repo/grantAgreement/Europäische Kommission/Horizon2020/636286//Lynceus2Market - An innovative people localisation system for safe evacuation of large passenger ships/Lynceus2Market |
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