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Capacitance-Voltage Study of InN MOS Structure with Different Oxide Thickness

InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter.
At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718107-122606
Date18 July 2007
CreatorsTsai, Chia-hsiu
ContributorsT. C. Yen, Q. Y. Chen, L. W. Tu, M. H. Tsai
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718107-122606
Rightsnot_available, Copyright information available at source archive

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