InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter.
At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718107-122606 |
| Date | 18 July 2007 |
| Creators | Tsai, Chia-hsiu |
| Contributors | T. C. Yen, Q. Y. Chen, L. W. Tu, M. H. Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718107-122606 |
| Rights | not_available, Copyright information available at source archive |
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