This dissertation presents studies electrodeposited MoS2 and metal-doped MoS2 thin films, and their performance for energy storage, catalysis, and biosensor applications. Ni-doped MoS2 thin films were fabricated by electrodeposition from electrolytes containing both MoS42- and varying concentrations of Ni2+, followed by annealing at 400 ºC for 2 h in an Ar atmosphere. The film resistivity increased from 11.3 µΩ-cm for un-doped MoS2 to 32.8 µΩ-cm for Ni-doped MoS2 containing 9 atom% Ni. For all Ni dopant levels studied, only the x-ray diffraction (XRD) pattern expected for MoS2 is observed, with the average grain size increases with increasing Ni content. Ni-doped MoS2 thin films were tested for their activity towards the hydrogen evolution reaction (HER) in 0.5M H2SO4. Tafel equation fits reveal that the catalytic activity for HER, as measured by the exchange current density, increases up to 6 atom% Ni, and then decreases slightly for 9 atom% Ni. Ni-doped MoS2 thin films were also tested in 1.0 M Na2SO4 for use within electrochemical supercapacitors, and the capacitance per unit area increases by 2-3x for 9 atom% Ni-doped MoS2 relative to un-doped MoS2. The highest specific capacitance obtained for Ni-doped MoS2 during galvanostatic charge-discharge measurements is ~300 F/g
| Identifer | oai:union.ndltd.org:siu.edu/oai:opensiuc.lib.siu.edu:dissertations-2865 |
| Date | 01 May 2020 |
| Creators | Giang, Hannah |
| Publisher | OpenSIUC |
| Source Sets | Southern Illinois University Carbondale |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Dissertations |
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