This thesis investigates advanced silicon devices fabricated using phosphorous ion implantation. The novel devices presented are the silicon quantum cellular automata cell and the few-donor device implanted with controlled numbers of phosphorous donors. In addition, the thesis presents novel measurements of a phosphorous implanted silicon double-dot device, a crucial building block of a quantum cellular automata cell. The devices were fabricated using standard lithographic techniques and, in the case of few-donor devices, a new method of controlled single ion implantation using on-chip detector electrodes. The positional accuracy of the implanted ions was achieved using a resist mask defined by electron beam lithography. A series of subsequent process steps has also been developed to repair the substrate implantation damage, define surface control gates, and to define single electron transistors used for readout via the detection of sub-electron charge transfer signals in the device. The device operations were achieved at mK-temperatures using various measurement techniques. In the case of quantum cellular automata cells, the device operation was demonstrated directly by switching the polarization of the cells from one logic state to another and detecting the corresponding change in the electrostatic environment using single-electron transistors. The control gate limits necessary for stable QCA cell operation were also determined, indirectly demonstrating QCA logic state switching. The double-dot device operation was demonstrated using SET detection in both linear and for the first time in non-linear regimes. In addition, source-drain conductance detection of charge states, simultaneous detection using single-electron transistors and source-drain conductance, and source-drain bias spectroscopy measurements of these systems were also achieved. In the case of few-donor implanted devices, isolated charge transfers were detected in both MOS and PIN based devices. The signals corresponded to between 0.01 and 0.05 of a single electron charge, induced on the islands of the SETs. The magnetic field dependence of the charge transfers detected in few-donor implanted devices was also investigated, along with basic phosphorous donor ionization experiments. The devices were also measured using SETs operated in rf mode, yielding consistent results. The work presented in this thesis is a step towards realizing a silicon charge-based quantum computer and other advanced single-electron devices based on phosphorous ion-implantation in silicon.
| Identifer | oai:union.ndltd.org:ADTP/258442 |
| Date | January 2008 |
| Creators | Mitic, Mladen , Electrical Engineering & Telecommunications, Faculty of Engineering, UNSW |
| Publisher | Awarded by:University of New South Wales. Electrical Engineering & Telecommunications |
| Source Sets | Australiasian Digital Theses Program |
| Language | English |
| Detected Language | English |
| Rights | Copyright Mitic Mladen ., http://unsworks.unsw.edu.au/copyright |
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