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The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/19991
Date12 1900
CreatorsChiang, Daniel Young
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

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