Investigação do óxido semicondutor CeO2 dopado com Fe e La pela espectroscopia de correlação angular gama-gama perturbada / Investigation of semiconductor oxide CeO2 doped with Fe and La by means of perturbed angular gamma-gamma correlation technique

Description

Made available in DSpace on 2014-10-09T12:41:53Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:09:30Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP / FAPESP:11/05408-2

Links & Downloads

1. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10556

Tags

CERIUM OXIDE

SEMICONDUCTOR MATERIALS

DOPED MATERIALS

IRON

LANTHANUM

HYPERFINE STRUCTURE

PERTURBED ANGULAR CORRELATION

SPECTROSCOPY

SOL-GEL PROCESS

SINTERING

X-RAY DIFFRACTION

SCANNING ELECTRON MICROSCOPY

Additional Fields

Identifer	oai:union.ndltd.org:IBICT/oai:10.40.40.102:123456789/10556
Date	09 October 2014
Creators	SALUTTE, CAIO de O.
Contributors	Orientador: Artur Wilson Carbonari
Source Sets	IBICT Brazilian ETDs
Detected Language	Portuguese
Type	info:eu-repo/semantics/publishedVersion, info:eu-repo/semantics/masterThesis
Format	91
Source	reponame:Repositório Institucional do IPEN, instname:Instituto de Pesquisas Energéticas e Nucleares, instacron:IPEN
Coverage	N
Rights	info:eu-repo/semantics/openAccess