Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter.
The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings.
Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients. / Master of Science
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/32316 |
| Date | 25 May 2007 |
| Creators | Cass, Callaway James |
| Contributors | Electrical and Computer Engineering, Boroyevich, Dushan, Wang, Fei Fred, Burgos, Rolando |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | cass_thesis_(2007-05-24).pdf |
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