This study employed a commercial code to simulate a chemical vapor deposition process in a rectangular chamber for deposition of a silicon dioxide layer on a rectangular substrate. We focus on the deposition rate on the substrate surface. We discuss the effects of the Reynolds number, the distance from inlet to substrate, the size of inlet region, the temperature of the inlet region, and the temperature of substrate.
The results show that as the temperature increase, the deposition rate on the substrate grows highly. This effect will decrease if the temperature is above the specific range. Besides, it is easily deposited unequally on the edge and corner region of the substrate. However, the central region on the substrate is still uniform. We could get bigger uniform area to adjust the proper conditions.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825106-103945 |
| Date | 25 August 2006 |
| Creators | Liu, Yu-chen |
| Contributors | Chien-yuh Yang, Jen-jyh Hwang, Ru Yang, Pey-shey Wu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825106-103945 |
| Rights | unrestricted, Copyright information available at source archive |
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