Hong Liang = 用化学气相淀积方法生长氮化物纳米材料 / 洪亮. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Hong Liang = Yong hua xue qi xiang dian ji fang fa sheng chang dan hua wu na mi cai liao / Hong Liang. / Acknowledgements --- p.ii / Abstract --- p.iii / Contents --- p.v / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Motivation --- p.2 / Chapter 1.2.1 --- A1N and AlGaN nanowires --- p.2 / Chapter 1.2.2 --- CVD --- p.3 / Chapter 1.3 --- Our work --- p.3 / Chapter Chapter 2 --- Experiment --- p.7 / Chapter 2.1 --- CVD system --- p.7 / Chapter 2.2 --- Sources and Substrates --- p.7 / Chapter 2.3 --- Growth of A1N nanowires --- p.8 / Chapter 2.4 --- Growth of AlGaN nanowires --- p.9 / Chapter Chapter 3 --- Characterization --- p.11 / Chapter 3.1 --- Scanning Electron Microscopy --- p.11 / Chapter 3.1.1 --- Topographic images by secondary electrons --- p.11 / Chapter 3.1.2 --- Elemental Analysis by Energy Dispersive X-ray --- p.12 / Chapter 3.2 --- Transmission Electron Microscopy --- p.12 / Chapter 3.3 --- X-Ray Diffraction --- p.14 / Chapter 3.4 --- Micro-Raman --- p.15 / Chapter Chapter 4 --- Results and Discussion --- p.18 / Chapter 4.1 --- A1N nano-structures --- p.18 / Chapter 4.1.1 --- A1N nano-leaves grown on silicon substrates --- p.18 / Chapter 4.1.2 --- A1N nanowires grown on silicon substrates --- p.19 / Chapter 4.1.3 --- SiNx nanowires grown on silicon substrates --- p.22 / Chapter 4.1.4 --- A1N nanowires grown on sapphire substrates --- p.26 / Chapter 4.1.5 --- Comparison with the results of other research groups --- p.31 / Chapter 4.2 --- AlGaN nano-structures --- p.33 / Chapter 4.2.1 --- AlGaN nanowires grown on silicon substrates --- p.33 / Chapter 4.2.2 --- Temperature dependence --- p.38 / Chapter 4.2.3 --- The influence of the mass ratio (Ga/Al) in the precursor metal sources --- p.43 / Chapter 4.2.4 --- Substrate effect --- p.46 / Chapter Chapter 5 --- Suggestion of the growth mechanism --- p.51 / Chapter 5.1 --- Growth mechanisms: an introduction --- p.51 / Chapter 5.2 --- The growth mechanisms for our produced samples --- p.57 / Chapter 5.2.1 --- Growth mechanism for A1N nanowires --- p.58 / Chapter 5.2.2 --- Growth mechanism for AlGaN nanowires --- p.61 / Chapter 5.2.3 --- Substrate effect --- p.65 / Chapter Chapter 6 --- Conclusions --- p.71 / Appendix --- p.73
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_325539 |
| Date | January 2006 |
| Contributors | Hong, Liang., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, vi, 74 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
Page generated in 0.0017 seconds