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Structural and magnetic properties of cobalt doped titanium dioxide. / CUHK electronic theses & dissertations collection

Cobalt doped anatase TiO2 films show room temperature ferromagnetism. Doping was provided by implantation using a MEVVA ion source. The enhancement of ferromagnetic properties was obtained by post-implantation annealing. The microstructure, magnetic properties and the dependence on the annealing conditions have being studied using various characterization techniques. Interestingly, the output referring to the saturation magnetization per Co atom with a value as high as 3.16 muB/Co atom, exceeds considerably that of the bulk cobalt which suggests that contribution to the overall magnetic behavior is not only a function of the concentration of inherently magnetic elements, but there must exist also sources of magnetisms. One of these sources are oxygen vacancies as discussed within this work. It is also interesting that instead of the more commonly observed hcp structure, the Co nanoclusters are found in fcc structure probably being stabilized by the TiO2 matrix. / In this work, we study the properties of cobalt-implanted titanium dioxide, a room temperature dilute ferromagnetic semiconductor discovered in 2001. The ferromagnetic interaction mechanism is however controversial. By using metal vapor vacuum arc (MEVVA) ion source, different doses of cobalt ions were implanted into anatase structures of titanium dioxide (TiO2) thin films. The TiO2 films which were sputtered on SiO2 (100nm)/Si (110) substrates and rutile structure of TiO2. The cobalt implanted TiO2 thin films were prepared with different atomic fraction and then thermally treated at different temperature after ion implantation. The structural properties of the anatase titanium dioxide were also studied as a comparison to rutile titanium dioxide. / Rutherford backscattering spectrometry (RBS) was performed to determine the composition of cobalt. The crystal structure of the thin films and rutile single crystal was mainly anatase as detected in XRD spectra. X-ray photoelectron spectrometry (XPS) and transmission electron microscopy (TEM) were also used in sample analysis. Vibrating sample magnetometer (VSM) was employed to study the magnetic properties of the cobalt implanted films. Ferromagnetic behaviors of these films were observed at room temperature. / Semiconductor spintronics is a promising new field of study in the ongoing quest to make electronic devices faster, cheaper, and more efficient. While current spintronics utilize the spin property of electrons to achieve greater functionally, the integration of spintronics into conventional semiconductor electronics will lead to advances optoelectronics, quantum computing, and other emerging fields of technology. This integration relies on effective generation; injection, transport, and detection of spin polarized electron current. To these end, mastering synthesis of room temperature ferromagnetic semiconductors is inevitable. / Luk, Wing Yan. / Adviser: H. P. Ho. / Source: Dissertation Abstracts International, Volume: 70-06, Section: B, page: 3730. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Abstracts in English and Chinese. / School code: 1307.

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_344301
Date January 2008
ContributorsLuk, Wing Yan., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, theses
Formatelectronic resource, microform, microfiche, 1 online resource (xvi, 215 leaves : ill.)
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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