>Magister Scientiae - MSc / Tin dioxide (SnO2) thin films are a worthy candidate for an electron transport layer (ETL) in
perovskite solar cells, due to its suitable energy level, high electron mobility of 240 cm2 v-1 s-
1, desirable band gap of 3.6 - 4.0 eV, and ultimately proves to be suited for a low temperature
thermal oxidation technique for ETL production. A variety of methods are available to
prepare SnO2 thin films such as spin and dip coating and chemical bath deposition. However,
the customary solid-state method, which incorporates thermal decomposition and oxidation
of a metallic Sn precursor compound in an oxygen abundant atmosphere prevails to be low in
cost, is repeatable and allows for large-scale processing.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:uwc/oai:etd.uwc.ac.za:11394/8239 |
| Date | January 2021 |
| Creators | James, Amy Frances |
| Contributors | Arendse, CJ |
| Publisher | University of Western Cape |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Rights | University of Western Cape |
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