A simple theoretical method for calculating electronic band structure of wurtzite materials based on the linear combination of orbital model is presented. To abtain better description of the conduction band structures, second-nearest-neighbor s and p state interaction are included. We suggest that the zinc-blende InN has a direct band gap of ~2 eV and an indirect band gap of ~0.7 eV located at L-points. Due to band folding effect, the wurtzite InN thus has a direct band gap of ~0.7 eV located at £F3-point.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0124106-150154 |
| Date | 24 January 2006 |
| Creators | Hsieh, Kun-lin |
| Contributors | Chun-nan Chen, Meng-en Lee, Ikai Lo, Jih-chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124106-150154 |
| Rights | withheld, Copyright information available at source archive |
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