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Organometallic vapor phase epitaxy of ZnxCd1-xSe on InP =: 用气態有機金屬外延方法在磷化銦上生長的硒化鋅鎘. / 用气態有機金屬外延方法在磷化銦上生長的硒化鋅鎘 / Organometallic vapor phase epitaxy of ZnxCd1-xSe on InP =: Yong qi tai you ji jin shu wai yan fang fa zai lin hua yin shang sheng chang de xi hua xin ge. / Yong qi tai you ji jin shu wai yan fang fa zai lin hua yin shang sheng chang de xi hua xin ge

by Lee Wai Lok. / x and 1-x are in title are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [67]-[70]). / by Lee Wai Lok. / Abstract --- p.i / Chapter Chapter1 --- Introduction --- p.1-1 / Chapter 1.1 --- Epitaxial Growth --- p.1-2 / Chapter 1.1.1 --- Background of Epitaxy --- p.1-2 / Chapter 1.1.2 --- Operating Principle of OMVPE --- p.1-2 / Chapter 1.1.3 --- Problems in Heteroepitaxy --- p.1-3 / Chapter 1.2 --- Basic Requirements of a Semiconductor Laser --- p.1-3 / Chapter 1.3 --- Our work --- p.1-4 / Chapter Chapter2 --- OMVPE Growth --- p.2-1 / Chapter 2.1 --- Our OMVPE System Design --- p.2-1 / Chapter 2.1.1 --- Growth Environment --- p.2-2 / Chapter 2.1.2 --- Susceptor Temperature Control --- p.2-2 / Chapter 2.1.3 --- Reactor Pressure Control --- p.2-2 / Chapter 2.1.4 --- MO Vapor Handling Control --- p.2-2 / Chapter 2.1.4.1 --- MO Flow Control --- p.2-3 / Chapter 2.1.4.2 --- Flow Path Selection --- p.2-3 / Chapter 2.1.5 --- Cabinet with Air Extraction --- p.2-3 / Chapter 2.1.6 --- Chemical Scrubber --- p.2-4 / Chapter 2.2 --- System Calibration --- p.2-4 / Chapter 2.3 --- Materials Used --- p.2-5 / Chapter 2.3.1 --- Precursor Materials --- p.2-5 / Chapter 2.3.2 --- Hydrogen Gas --- p.2-5 / Chapter 2.3.3 --- Nitrogen Gas --- p.2-6 / Chapter 2.3.4 --- Substrate --- p.2-6 / Chapter 2.4 --- Fabrication Conditions --- p.2-6 / Chapter Chapter3 --- Characterization --- p.3-1 / Chapter 3.1 --- X-ray Diffraction --- p.3-1 / Chapter 3.2 --- EDX Spectroscopy --- p.3-2 / Chapter 3.3 --- Optical Reflectance --- p.3-4 / Chapter Chapter4 --- Data Analysis --- p.4-1 / Chapter 4.1 --- ZnSe/GaAs(100) --- p.4-1 / Chapter 4.1.1 --- Structural Analysis --- p.4-1 / Chapter 4.1.2 --- Stoichiometry --- p.4-2 / Chapter 4.1.3 --- Growth Rate --- p.4-3 / Chapter 4.1.4 --- Energies of Critical Points --- p.4-3 / Chapter 4.1.5 --- Reflectance --- p.4-4 / Chapter 4.2 --- ZnCdSe/InP(100) --- p.4-5 / Chapter 4.2.1 --- Structural Analysis --- p.4-5 / Chapter 4.2.1.1 --- Structural Quality --- p.4-5 / Chapter 4.2.1.2 --- Crystal Structure --- p.4-5 / Chapter 4.2.1.3 --- Lattice Parameter --- p.4-8 / Chapter 4.2.2 --- Composition Range --- p.4-8 / Chapter 4.2.3 --- Degree of Relaxation --- p.4-9 / Chapter 4.2.4 --- Comparison to Prior Art --- p.4-10 / Chapter 4.2.5 --- Growth Rate --- p.4-11 / Chapter 4.2.6 --- Energies of Critical Points --- p.4-12 / Chapter Chapter5 --- Conclusions --- p.5-1 / Appendix A Calculation of the actual MO Mass Flow --- p.6-1 / Appendix B Interpretation of in-plane Lattice Parameter --- p.6-3 / Appendix C Structure Factor of Wurtzite Lattice --- p.6-4 / References --- p.7-1

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321469
Date January 1996
ContributorsLee, Wai Lok., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, ii, [70] leaves : ill. (some folded) ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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