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The Metal-Organic Chemical Vapor Deposition of Cu(II)-bishexafluoroacetylacetonate on a Tungsten Substrate

Evidence is reported for the formation of carbon-containing contamination products at the copper-tungsten (Cu-W) interface during the metal organic chemical vapor deposition (MOCVD) of copper on tungsten. Cu(II)bishexafluoroacetylacetonate [Cu(hfac)_2] was physisorbed onto lightly oxidized tungsten (WO_x) at 115K, under ultra-high vacuum conditions, and then annealed sequentially to higher temperatures. Copper reduction was observed by 320K. Carbonaceous and carbidic contamination of the WO_x surface was observed, even after sample warming to 625K in UHV. The results indicate that low temperature MOCVD of Cu may be possible, but interfacial contamination from the organic ligand fragmentation is a major concern.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc500726
Date05 1900
CreatorsWelton, Theresa E. (Theresa Eilene)
ContributorsKelber, Jeffry Alan, 1952-, Daugherty, Kenneth E.
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formativ, 32 leaves : ill., Text
RightsPublic, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved., Welton, Theresa E. (Theresa Eilene)

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