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Electronic characteristics of defects of GaN films grown on Si(111) substrate

The electronic properties of the defects of the GaN/Si(111) system has been successfully measured by STM in the work. Different types of the dislocations in GaN films, such as edge dislocations and screw dislocations, have been observed. Defects induce the change of the band gap from 3.4 eV to 2.2 eV. The characteristic scattering length of the edge dislocation is around 25 nm.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728109-191606
Date28 July 2009
CreatorsChen, Bo-Chih
ContributorsL. W. Tu, Ya-Ping Chiu, Chung-Lin Wu, Yi-Chun Chen
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-191606
Rightswithheld, Copyright information available at source archive

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