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Study on ultra low-k silicon oxide with nano-porous structure

In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake after porous silica film undergoes O2 plasma ashing. Besides, CMP process can to recover the damaged films by removed the degraded parts. From the result, we know that O2 plasma causing the bulky damage. Finally, the resistance of metal penetration of O2 plasma treated POSG is performed by utilizing BTS test. It was found that the moisture uptake in POSG films assisting metals in ionization process. Then, the penetrated metal ions in POSG film causes the leaky characters degraded.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708102-111915
Date08 July 2002
CreatorsTsai, Hong-Ming
ContributorsTing-Chang Chang, Chao-Hsin Chien, Chin-Fu Liu, Po-Tsun Liu, Dong-Po Wang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915
Rightsunrestricted, Copyright information available at source archive

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