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Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques.

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:osu1373894407
Date16 September 2013
CreatorsCardwell, Drew
PublisherThe Ohio State University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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