The fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally.
The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in the freshly grown samples, but would disappear after the storage of 3 months.
Copper doped n-type ZnO thin film samples with low carrier concentration (n~〖10〗^16 〖cm〗^(-3)) were investigated by using both conventional and Laplace DLTS techniques. Positive DLTS signal peaks were detected that are suspected to be contributed by the minority carrier (hole carrier) emission. A physics model involving the inversion layer of a metal-insulator-semiconductor contact has been invoked to interpret the hole carrier concentration existing near the metal-semiconductor interface. Expression for the defect concentration is determined as a function of the temperature of DLTS peaks. AnEv+0.6eV defect with high concentration (N_T~〖10〗^17 〖cm〗^(-3)) was detected. The concentration of Ev+0.6eVcan be enhanced when the annealing temperature was increased from 750 to 900 degree C. / published_or_final_version / Physics / Master / Master of Philosophy
| Identifer | oai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/211117 |
| Date | January 2015 |
| Creators | Ho, Lok-ping, 何樂平 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Source Sets | Hong Kong University Theses |
| Language | English |
| Detected Language | English |
| Type | PG_Thesis |
| Rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License |
| Relation | HKU Theses Online (HKUTO) |
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