This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 µm. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 µm thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton polyamide film. This etched film is used as a stand off, gap between two electrodes of the electrostatic valve assembly. The criterion is to develop the processed using standard industry tools. Pre post etch effects, such as, surface roughness, etching pattern, critical dimensions on the samples are measured with Veeco profilometer.
| Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:etd-4141 |
| Date | 01 January 2007 |
| Creators | Dhru, Shailini Rajiv |
| Publisher | STARS |
| Source Sets | University of Central Florida |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Electronic Theses and Dissertations |
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