Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS /

Description

Thesis (Ph.D.(Physics))--University of Pretoria, 2009. / Includes abstract in English. Includes bibliographical references. Also available online.

Links & Downloads

1. http://upetd.up.ac.za/thesis/available/etd-02022010-134937/

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/650064684
Date	January 2009
Creators	Nyamhere, Cloud.
Source Sets	OCLC
Language	English
Detected Language	English
Source	Access to E-Thesis