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A study of the structural properties of SiC and GaN surfaces and theirinterfaces by first principle total energy calculation

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

  1. 10.5353/th_b3124413
  2. b3124413
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/36022
Date January 2003
CreatorsDai, Xianqi., 戴憲起.
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31244130
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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