Return to search

Technology development and process integration of alternative gate dielectric material : hafnium oxide /

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 123-134). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/51793519
Date January 2000
CreatorsLee, Byoung Hun,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceFull text (PDF) from UMI/Dissertation Abstracts International

Page generated in 0.0016 seconds