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Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology physics, reliability, and process development /

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/70960749
Date January 1900
CreatorsRhee, Se Jong,
Publisher[Austin, Tex. : University of Texas Libraries,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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