Return to search

Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology

Mùˆnchen, University der Bundeswehr, Diss., 2005.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/182778362
CreatorsCapodieci, Vanessa.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
Sourcekostenfrei

Page generated in 0.002 seconds