Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:20517 |
| Date | 22 July 2016 |
| Creators | Leu, Jihperng, Tu, H.E., Chang, W.Y., Chang, C.Y., Chen, Y.C., Chen, W.C., Zhou, H.Y. |
| Publisher | Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Source | AMC 2015 – Advanced Metallization Conference |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:ch1-qucosa-206986, qucosa:20503 |
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