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GaAs VCSEL Metallization and Characterization

¡uGaAs VCSEL Contact Process and Feature Analysis ¡vIn this article, we
talk about the process of metalization on sample of epied GaAs VCSEL
structure. We deposit Au/Ge-Au on n-GaAs substrate for n-type contact ¡Fand
Au/Be-Au on p-DBR for p-type contact by thermal evaporation. To lower
threshold current, and increase laser output power, ohmic contact is a necessary
condition. Furthermore a lot of analysis is done for injection current-EL
spectrum; VCSEL structure-EL spectrum; output aperture-laser output power.
And check the laser mode with gain Spectrum ¡Bresonant cavity mode ¡B
spontaneous emission of active layer. Throughout the analysis mention above,
we hope to find a reasonable and reliable way of VCSEL structure design, so
that we can reduce the heat effect to vertical cavity surface emitting laser.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720100-170156
Date20 July 2000
CreatorsLai, Chih-Ming
ContributorsLi-Wei Tu, Yan-Ten Lu, Ikai Lo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156
Rightsoff_campus_withheld, Copyright information available at source archive

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