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The study of microstructures and electrical properties of the interface of AlN/GaN

AlN thin films grown on GaN/Sapphire substrate by RF magnetron sputtering technique with AlN target has been studied. Simple MIS capacitor was fabricated in order to evaluate the electrical properties of AlN films that played as a insulator.
Various microstructures of AlN thin films can be obtained by controlling the growth parameters, such as sputtering powers, sputtering distances and working pressure. The microstructures of the AlN films were examined by X-ray diffraction. The observation of the surface morphology ,the distribution of defects and the interface of AlN/GaN were performed by transmission electron microscopy.
The results showed that the amorphous AlN thin films were obtained with a 21cm long sputtering working distance and under the 100W sputtering power and 8mtorr working pressure conditions.
The results of the C-V measurement indicated that the MIS device demonstrated a capacitor behavior, however a large leak current showed up in the end. The quality of the AlN films and the process procedures of MIS device still need be improved further.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0628101-170016
Date28 June 2001
CreatorsShen, Kuo-Hsu
ContributorsLi-Wei Tu, K. Y. Hsieh, Bae-Heng Tseng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628101-170016
Rightsunrestricted, Copyright information available at source archive

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