Thin-film solar cells based on an absorber layer of chalcogenide compounds (CIGS, CdTe) are today among the most promising photovoltaic technologies due to their long-term ability to gain a foothold in mass commercial production as an alternative to conventional Si solar cells. Despite this success, the physical origin of the defects present in the thin films are still insufficiently elucidated, especially in the compounds of the chalcopyrite family Cu(In_{1x},Ga_{x})(S_{y},Se_{1y})_{2}. The research focuses on the identification and analysis of microstructural defects responsible for the electrical instability of chalcopyrite-based thin-film solar cells with a typical heterostructure arrangement ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se_{2}/Mo. The non-uniform polycrystalline nature of semiconductor materials in this complex multilayer structure requires a comprehensive analysis of electro-optical, structural and compositional properties associated with the actual morphology at the macroscopic, microscopic or even nanoscopic level. The observed predominant ohmic or non-ohmic current conduction in the dark transport characteristics was also reflected in the slope deviations of the excessive noise fluctuations, which were in the spectral domain exclusively in the form of flicker noise with dependency S_{i} ~ f^{1}. Spatially resolved electroluminescence based on stimulated photon emission by charge carriers injecting into the depletion region, not only showed a significantly inhomogeneous distribution of intensity in planar heterojunction under forward bias, but also revealed light emitting local spots in reverse bias due to a trap-assisted radiative recombination through the high density of defect states. Microscopic examination of the defect-related light emitting spots revealed rather extensive defective complexes with many interruptions through the layers, especially at the heterojunction CdS/Cu(In,Ga)Se_{2} interface. Besides, the high leakage current via these defective complexes subsequently led to a considerable local overheating, which caused a clearly observable structural and morphological changes, such as deviations in absorber layer stoichiometry due to Cu–In–Ga–Se segregation, Cu-rich and Ga-rich grains formation with an occurrence of Se-poor or Cu_{x}Se_{y} secondary phases regions, material redeposition accompanied by evaporation of ZnO:Al/i-ZnO/CdS layers together with the formation of Se structures on the surface around the defects. Within the research, analytical modelling of transport characteristics was implemented with parameters extraction of individual transport mechanisms to understand the non-ohmic shunt behaviour due to leakage current. In addition to the proper current path along the main heterojunction, the proposed model contains parasitic current pathways as a consequence of recombination-dominated charge transport or current conduction facilitated by multi-step tunnelling via high density of mid-gap defect states in the depletion region, ohmic leakage current caused by pinholes or low-resistance paths along grain boundaries in Cu(In,Ga)Se_{2}, or space-charge limited current due to metals diffusion from the ZnO:Al layer and grid Ag contacts through disruptions in i-ZnO/CdS layers.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:447549 |
| Date | January 2021 |
| Creators | Škvarenina, Ľubomír |
| Contributors | Šály,, Vladimír, Fejfar, Antonín, Macků, Robert |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Slovak |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0019 seconds