Hole-doped manganite La0.7Ca0.3MnO3 materials has been extensively studied because of its colossal magnetoresistance (CMR) characteristic in a magnetic field. Recently, a new member of CMR family La0.7Ce0.3MnO3 , an electron-doped manganite, raises a new wave of attention for possible application of p-n junctions.
Single Phase La0.7Ce0.3Mn3 films were usually grown by the pulse laser deposition (PLD) technique with a relatively narrow growth window around 755¢J¡Ó5¢J. In this study, we use a RF sputtering technique to grow La0.7Ce0.3Mn3 epitaxial films, which has not been tried yet. Films are grown on SrTiO3, MgO and LaAlO3 substrates. The best film have the metal-insulator transition temperature (TP) 304K and the curie temperature (TC) 310K, which are higher than that of grown by PLD method
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0829106-145607 |
| Date | 29 August 2006 |
| Creators | Tseng, Chung-cheng |
| Contributors | Hsiung Chou, Ying-Chung Chen, Shih-Jye Sun |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0829106-145607 |
| Rights | campus_withheld, Copyright information available at source archive |
Page generated in 0.0017 seconds