The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser
deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling
of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different
thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective
fluorite-type structure with a Fm3⎯⎯m space group. From the calculated absorption spectrum, a direct
electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around
0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting
electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating
ground state in YBiO3.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31230 |
| Date | 14 August 2018 |
| Creators | Jenderka, Marcus, Richter, Steffen, Lorenz, Michael, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 1089-7550, 125702 |
Page generated in 0.0019 seconds