This thesis deals with scanning electron microscope working at higher pressure in the specimen chamber. The main goal was to study the voltage contrast on the PN junction of the transistor under suitable working conditions for using environmental scanning microscope. The observation of sample was enabled by a scintillation detector designed for observation of high pressure.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:219045 |
| Date | January 2011 |
| Creators | Jabůrek, Ladislav |
| Contributors | Špinka, Jiří, Jirák, Josef |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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