Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa₁âxN/InyGa₁âyN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, one of the modes of the Fabry-Perot cavity formed by the GaN/sapphire and the GaN/air interfaces, shows a strong superlinear increase in intensity with excitation intensity rise. The vertical cavity surface emitting laser (VCSELs) structure is grown by metal-organic chemical vapor phase deposition and the threshold is as low as 200kW/cm². The lasing in the sample probably results from the ultrahigh material gain due to the spontaneous formation of dense array of nanoscale InGaN quantum dots (QDs) having an exceptional high area density. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3837 |
| Date | 01 1900 |
| Creators | Chen, Zhen, Chua, Soo-Jin, Chen, Peng, Zhang, Ji |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 330414 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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