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Characterization of p-type wide band gap transparent oxide for heterojunction devices

Thesis (Ph. D.)--University of Massachusetts Amherst, 2009. / Includes bibliographical references (p. 103-107). Print copy also available.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/456412809
Date January 2009
CreatorsLim, Sang-Hyun,
PublisherAmherst, Mass. : University of Massachusetts Amherst,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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