Return to search

Surface charge spectroscopic studies of fixed oxide charge depth distribution and breakdown properties of ultra-thin SiO₂/Si. / 超薄二氧化硅的固定電荷分佈和電擊穿特性 / Surface charge spectroscopic studies of fixed oxide charge depth distribution and breakdown properties of ultra-thin SiO₂/Si. / Chao bo er yang hua gui de gu ding dian he fen bu he dian ji chuan te xing

by Fong Hon Hang = 超薄二氧化硅的固定電荷分佈和電擊穿特性 / 方漢鏗. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Fong Hon Hang = Chao bo er yang hua gui de gu ding dian he fen bu he dian ji chuan te xing / Fang Hankeng. / ABSTRACT --- p.i / ACKNOWLEDGEMENTS --- p.iii / TABLE OF CONTENT --- p.iv / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xiv / LIST OF SYMBOLS --- p.xv / Chapter Chapter1 --- Background of the thesis work / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Stability of charge on oxide --- p.1 / Chapter 1.3 --- Defects in SiO2/Si --- p.2 / Chapter 1.4 --- Objectives of the thesis work --- p.4 / Chapter 1.5 --- Organization of the thesis --- p.5 / Bibliography for Chapter1 --- p.6 / Chapter Chapter2 --- Theory of X-ray Photoelectron Spectroscopy (XPS) and Surface Charge Spectroscopy (SCS) / Chapter 2.1 --- Introduction --- p.7 / Chapter 2.2 --- X-ray photoelectron spectrometry (XPS) --- p.8 / Chapter 2.2.1 --- Binding energy reference for semiconductors --- p.10 / Chapter 2.2.2 --- Measurement of surface Fermi level --- p.15 / Chapter 2.2.3 --- XPS quantitative analysis --- p.17 / Chapter 2.2.3.1 --- Electron Inelastic Mean free Path --- p.16 / Chapter 2.2.3.2 --- Atomic concentration of a homogeneous material --- p.17 / Chapter 2.2.3.3 --- Determination of overlayer thickness --- p.19 / Chapter 2.3 --- Surface charge Spectroscopy (SCS) --- p.21 / Chapter 2.3.1 --- Principle of the SCS technique --- p.21 / Chapter 2.3.2 --- Control of the dielectric surface potential --- p.21 / Chapter 2.3.3 --- Dielectric layer surface potential --- p.22 / Chapter 2.3.4 --- Surface band bending --- p.23 / Chapter 2.3.5 --- Limitation of the dielectric layer thickness --- p.24 / Chapter 2.4 --- Applications of SCS on Metal-Oxide Semiconductor (MOS) --- p.24 / Chapter 2.4.1 --- Measurements of interface state density (Dit) --- p.24 / Chapter 2.4.2 --- Determination of density of fixed-oxide charges --- p.27 / Bibliography for Chapter2 --- p.28 / Chapter Chapter3 --- Instrumentation & methodology / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.30 / Chapter 3.1.1 --- General description of the Kratos AXIS - HS XPS system --- p.30 / Chapter 3.1.2 --- X-ray source --- p.32 / Chapter 3.1.3 --- AXIS - HS electron analyzer and transfer lens system --- p.35 / Chapter 3.1.4 --- Laser alignment facility --- p.38 / Chapter 3.1.5 --- In-lens (Micro XPS) aperture --- p.38 / Chapter 3.1.6 --- Iris (Lens input aperture) --- p.39 / Chapter 3.1.7 --- Magnetic immersion lenses --- p.39 / Chapter 3.1.8 --- Lateral resolutions --- p.41 / Chapter 3.1.9 --- Charge neutralizer --- p.53 / Chapter 3.1.10 --- XPS imaging capability --- p.58 / Chapter 3.1.11 --- Angle-resolved X-ray photoelectron spectroscopy (ARXPS) --- p.58 / Chapter 3.1.12 --- Ion sputtering system and depth profiling --- p.59 / Chapter 3.2 --- Methodology for surface charging --- p.59 / Chapter 3.3 --- Sample preparation --- p.61 / Bibliography for Chapter3 --- p.62 / Chapter Chapter4 --- Fixed-oxide charge Qf(z) of thermally-grown SiO2/Si(100) / Chapter 4.1 --- Introduction --- p.63 / Chapter 4.2 --- Experimental results on oxide surface potential as a function of oxide thickness --- p.64 / Chapter 4.3 --- Calculation of fixed-oxide charge distribution --- p.69 / Chapter 4.3.1 --- Gauss's law --- p.69 / Chapter 4.3.2 --- Density of fixed-oxide charge --- p.70 / Chapter 4.4 --- Applications --- p.78 / Bibliography for chapter4 --- p.80 / Chapter Chapter5 --- Observation of dielectric electrical breakdown phenomena of SiO2/Si structure by SCS / Chapter 5.1 --- Introduction to electrical breakdown analysis in device electronics --- p.81 / Chapter 5.2 --- Experimental --- p.82 / Chapter 5.3 --- Results --- p.82 / Chapter 5.3.1 --- Analysis on 1000A Sio2/Si --- p.82 / Chapter 5.3.1.1 --- Variation of C 1s under charging --- p.82 / Chapter 5.3.1.2 --- Stochastic breakdown of SiO2 --- p.84 / Chapter 5.3.2 --- Analysis on 19k SiO2/Si --- p.91 / Chapter 5.4 --- Discussion --- p.93 / Chapter 5.4.1 --- Model of stochastic breakdown of SiO2/Si --- p.93 / Chapter 5.4.2 --- Variation of Si 2p under charging --- p.95 / Chapter 5.5 --- Summary --- p.96 / Bibliography for Chapter5 --- p.99 / Chapter Chapter6 / Conclusion --- p.100

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_323200
Date January 2000
ContributorsFong, Hon Hang., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, xvii, 100 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Page generated in 0.0019 seconds