The mechanism of the flatband voltage shift by capping a thin layer of Me₂O₃ (Me=Gd, Y and Dy) on SiO₂ and HfO₂-based dielectrics

Description

Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.

Links & Downloads

1. http://www.lib.utexas.edu/etd/d/2008/zhangm41891/zhangm41891.pdf#page=3

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/272401180
Date	January 1900
Creators	Zhang, Manhong,
Publisher	[Austin, Tex. : University of Texas Libraries,
Source Sets	OCLC
Language	English
Detected Language	English